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Simplifying GaN transistor circuit design

GaN Systems has announced its GS66508T-EVBHB Half-Bridge Evaluation Board which demonstrates the performance of its GaN enhancement mode power semiconductors in real power circuits. The GS66508T-EVBHB Eval Board can be configured into any half bridge-based topology.

The Eval Board can be used in synchronous Boost or Buck conversion, as well as pulsed switching to evaluate transistor waveforms.The kit has full documentation, including Bill-of-Materials component part numbers, PCB layout and thermal management, and gate drive circuit reference design.

The evaluation board consists of two 650V, 30A GS66508T GaN FETs, half bridge gate drivers, a gate drive power supply, and heatsink.The GS66508T high power transistors are based on GaN Systems’ proprietary Island Technology and belong to its 650V family of high density devices which are said to achieve 98.7% power conversion efficiency at 1.5kW with switching speeds of >100V/nS and ultra-low thermal losses..

Power input should be 9 to 12Vdc, with a maximum of 15V.On-board voltage regulators create +5V for the logic circuit and +6.5V for the gate driver. The 30A/55m? GS66508T GaN power transistors are top-side cooled and feature near-chip-scale, thermally-efficient GaNPX packaging.

Author
Tom Austin-Morgan

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