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Nexperia announces next generation 650 V GaN technology

Nexperia has announced a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging.

The devices achieve superior switching FOMs and on-state performance with improved stability, and simplify application designs thanks to their cascode configuration which eliminates the need for complicated drivers and controls.

The GaN technology employs through-epi vias, reducing defects and shrinking die size by around 24%. RDS(on) is also reduced to just 41 mΩ (max., 35 mΩ typ. at 25 °C) with the initial release in traditional TO-247, with high threshold voltage and low diode forward voltage. The reduction will further increase, to 39 mΩ (max., 33 mΩ typ. At 25 °C) with CCPAK surface-mount versions.

Because the parts are configured as cascode devices, they are also simple to drive using standard Si MOSFET drivers. Both versions meet the demands of AEC-Q101 for automotive applications.

Nexperia’s CCPAK surface mount packaging adopts the company's copper-clip package technology to replace internal bond wires. This reduces parasitic losses, optimises electrical and thermal performance, and improves reliability.

CCPAK GaN FETs are available in top- or bottom-cooled configurations making them very versatile and help further improving heat dissipation.

Author
Neil Tyler

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Websites

http://www.nexperia.com

Companies

Nexperia

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