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IGBTs target induction heating applications

IGBTs target induction heating applications

International Rectifier has launched a pair of ultra fast trench insulated gate bipolar transistors (IGBTs) for induction heating and resonant switching applications such as welding and high power rectification.

The 1200V devices utilise IR's thin wafer trench technology to offer low VCE (on) and ultra fast switching to reduce power dissipation and achieve higher power density. They also feature a 1300V repetitive peak rating for added system reliability.

The IGBTs are co packaged with a low forward-voltage high peak current soft forward-recovery diode, which is optimised for resonant zero current turn-on operation.

Author
Laura Hopperton

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Websites

http://www.irf.com

Companies

Infineon

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