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IGBTs reduce switching and conduction losses

IGBTs reduce switching and conduction losses

International Rectifier has launched a new series of 1200V insulated gate bipolar transistors for induction heating, uninterruptible power supplies, solar and welding applications.

The range utilises thin wafer Field-Stop Trench technology, which is said to result in significantly reduced switching and conduction losses, as well as higher power density and greater efficiency at higher frequencies.

Performance benefits include wide square reverse bias safe operating area, positive VCE (on) temperature coefficient and low VCE (on). The devices are available with or without an internal ultra fast soft recovery diode. Die products are also available with solderable front metal for improved thermal performance and efficiency.

Author
Laura Hopperton

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