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Ampleon extends LDMOS base station and multi-carrier line up

Ampleon has introduced the BLC10G27XS-400AVT 400W asymmetric Doherty RF power transistor.

Designed for use in base station multi-carrier applications operating in the 2.496 GHz to 2.690 GHz frequency range, the -400AVT uses Ampleon's 9th generation 28V LDMOS process technology. Fabricated in an air cavity plastic (ACP) earless SOT-1258-4 package, the Doherty transistor typically delivers a drain efficiency of 45%.

The BLC10G27XS-400AVT offers rugged characteristics, up to a VSWR of 10:1, considered essential for base station applications where high-power extreme mismatch conditions can often occur.

The transistor has integrated ESD protection, has a low output capacitance that improves Doherty performance, and includes internal input and output impedance transformation, enabling user-friendly PCB matching to 50-ohm.

The power gain specification of the BLC10G27XS-400AVT is typically 13.3 dB based on quoted test conditions. In addition, the -400AVT has low thermal resistance attributes that yield excellent thermal stability for demanding base station applications.

Design support resources for the BLC10G27XS-400AVT include a recommended driver, the BLM9D2327S-50PB, an LDMOS 2-stage integrated Doherty MMIC and the PCB layout for a Doherty production test circuit.

Author
Neil Tyler

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