comment on this article

100V high-speed, half bridge evaluation board

GaN Systems, a leader in GaN (gallium nitride) power semiconductors, has unveiled a 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor.

This high-performance solution has been developed for existing and new PCB designs and allows power electronics designers to evaluate GaN for growing 48V market applications, including non-isolated step-down converters, non-isolated step-up converters, and half-bridge and full-bridge converters.

The evaluation board includes an OnSemi NCP51810 GaN driver and two GaN Systems GS61008P E-mode GaN power transistors connected in a high-side, low-side configuration and all necessary drive circuitry. It provides the utmost flexibility of GaN transistor and driver combinations and can be applied in any topology that requires the use of a high-side/low-side FET combination. When connected into an existing power supply, it can replace HS/LS drives and MOSFETs. The evaluation board also offers configurable dead-time control and driver enable/disable functions.

Several pins are available to probe the circuit. HS and LS gate drives, as well as SWN are accessible. Additional benefits include fast propagation delay of 50 ns max, increased efficiency and allows paralleling, and control of rise and fall time for EMI tuning.

The OnSemi NCP51810 high-speed gate driver is designed to meet the requirements of driving E-mode GaN HEMT power switches in half-bridge power topologies. Features include 150V, high-side and low-side gate driver, 200 V/ns dV/dt rating, and offers protection functions such as an independent under-voltage lockout (UVLO) for high-side and low-side output stages.

The GaN Systems GS61008P is an E-mode GaN-on-silicon power transistor, bottom-side cooled that offers very low on-resistance, low gate charge, junction-to-case thermal resistance, and high current capabilities for demanding high power applications.

In addition, the transistor features a simple gate drive (0 V to 6 V), high switching frequency (> 10 MHz), fast and controllable fall and rise times, reverse current capability, and zero reverse recovery loss. These features combine to provide very high efficiency power switching.

Neil Tyler

Comment on this article

This material is protected by MA Business copyright See Terms and Conditions. One-off usage is permitted but bulk copying is not. For multiple copies contact the sales team.

What you think about this article:

Add your comments


Your comments/feedback may be edited prior to publishing. Not all entries will be published.
Please view our Terms and Conditions before leaving a comment.

Related Articles

To gel or pad?

New electronic product generations bring new challenges associated with thermal ...

Extreme boards!

“Extraordinary circumstances often bring along with them extraordinary ...

Get to market faster

A quick look at using Vicor's PFM and AIM in VIA packaging for your AC to Point ...

Custom MMIC design

Plextek RFI CEO Liam Devlin discusses the technical and commercial ...

Cloud Solver

Today, new technologies enter the market very, very quickly. For some of the ...

Battery win-win

I know wearables are no new concept and we already have plenty of devices that ...

Battery technology

The move to battery powered vehicles is gathering speed. The UK has joined ...

On the charge

The UK throws away around 600 million household batteries every year, with ...

Piezoelectric haptics

Boréas Technologies’ CEO, Simon Chaput, talks to Neil Tyler about the company’s ...