comment on this article

RF MEMS switch could enable 'true 4G'

General Electric has created a 3GHz RF MEMS switch that can handle up to 5kW of power. Measuring just 50 x 50µm, the device is expected to enable increased data transfer speeds, enhanced signal quality and the advanced RF designs required of LTE-Advanced devices.

For the full story, click here.

Author
Laura Hopperton

Comment on this article


This material is protected by MA Business copyright See Terms and Conditions. One-off usage is permitted but bulk copying is not. For multiple copies contact the sales team.

What you think about this article:


Add your comments

Name
 
Email
 
Comments
 

Your comments/feedback may be edited prior to publishing. Not all entries will be published.
Please view our Terms and Conditions before leaving a comment.

Related Articles

PillarHall test chip

The PillarHall test chip for analysing 3D thin film structures from Chipmetrics ...

6G research

imec, the research and innovation hub in nanoelectronics and digital ...

Antenna integration

Embedded antennas, also known as chip antennas, or SMD (surface mount design) ...

NI Trend Watch 2014

This report from National Instruments summarises the latest trends in the ...

RF power transistor

Ampleon has announced the BLU9H0408L-800P 800-W RF power transistor. Using the ...

RF power transistors

Ampleon has released the BLF989E RF power transistor, which uses the very ...

CBRS antennas

KP Performance Antennas has released a CBRS antenna line intended for WISP and ...

Boosted NFC

This video provides a brief introduction on how ams' boostedNFC technology ...

Digital consciousness

​Would you consider uploading your brain to the cloud if it meant you could ...

The changing face

A year of seismic social and political change 1968 saw anti-Vietnam war ...

Extreme machines

Few companies have the historical pedigree of Curtiss-Wright, formed in 1929 ...