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RF Micro Devices' power amplifiers

RF Micro Devices has just announced two gallium arsenide heterojunction bipolar transistor pre driver power amplifiers for cellular base station applications.

The half Watt RF3807 and 2W RF3809 single stage devices operate across cdma, gsm, dcs, pcs and umts frequencies.
Go to the RF Micro Devices web site

Author
Graham Pitcher

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