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UK SiC fab to supply 650V MOSFET for electric vehicles

Raytheon UK's semiconductor business unit in Glenrothes has been selected by a leading automotive manufacturer to develop a silicon carbide (SiC) based MOSFET for use in electric, hybrid electric and plug in hybrid electric vehicles.

John Kennedy, head of Raytheon UK's Integrated Power Solutions, said: "SiC overcomes many of the problems restricting the use of traditional silicon semiconductor devices for certain applications within electric vehicles and their hybrid derivatives. The benefits include higher temperature operation, lower switching losses and lower parasitics – making possible the production of reliable, high power devices in small and lightweight packages that do not have the same cooling requirements as silicon based components."

Raytheon will employ its SiC fabrication expertise to develop a MOSFET rated at 650V/60A which can be mass produced cost effectively and which is compliant with the ISO/TS 16949 automotive quality standard.

Raytheon, which operates Europe's only SiC production foundry, has been supplying devices to the automotive industry for several years.

Author
Graham Pitcher

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