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SOT-MRAM pioneer Antaios secures funding

Antaios, a French company working on the development of SOT-MRAM technology (Spin-Orbit Torque Magnetic Random-Access Memory), has announced that it has secured $11 million in funding to accelerate innovation and develop new strategic partnerships.

SOT-MRAM has the potential, according to the company, to be deployed in almost every chip, becoming a candidate for the long-awaited universal (embedded) memory.

The investment comes from technology funds focused on identifying and fostering promising, fast-growth, early-stage technology companies and includes Silicon Valley-based Applied Ventures, the venture capital arm of Applied Materials.

“This funding is a key milestone for Antaios, asserting the value of our technology and the industry’s interest for SOT as the next-generation MRAM, which solves the limitations of its current implementations,” said Jean-Pierre Nozières, CEO of Antaios.

Michael Stewart, Investment Director at Applied Ventures added, “Applied Ventures supports the continued development of logic-based embedded memory technologies like MRAM that offer low power, high performance and high endurance for Internet of Things and edge AI devices.”

By enabling simultaneously high operating speed and infinite read/write endurance, SOT has the potential to replace both embedded Non-Volatile Memory and embedded cache in microcontrollers, microprocessors and System-on-Chip designs.

SOT is described as the next generation MRAM, beyond Spin-Transfer Torque (STT) which is currently ramping up at all major semiconductor foundries.

SOT is said to be easily implemented on STT-MRAM manufacturing lines, which would then support a quick market deployment in applications as diverse as Internet of Things (IoT), mobile, computing and storage.

Author
Neil Tyler

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