03 December 2012 Self-healing nand flash can survive 100million cycles Self-healing nand flash can survive 100million cycles Researchers in Taiwan have found a way to 'heal' nand flash memory modules to make them last 100million cycles. The team, from electronics firm Macronix, made the breakthrough by redesigning the chips to put a heater alongside the memory material that holds the data. For this they borrowed a solution from a competing technology, phase change ram (PCRAM). In PCRAM, a bit is stored in a material called a chalcogenide glass, which can be either conductive or insulating. The bit's material switches between those states when briefly heated in a particular way. The researchers noticed that heating the glass to its melting point had a kind of healing effect on the PCRAM modules, and figured a similar technique would work for flash. As such, they altered the gate electrodes so that the device could carry current to heat the memory cells. They then added into the mix a number of diodes. According to researcher Hang Ting Lue, it was this modified structure that enabled current to pass through the transistor's gate to generate pulses of heat about 800°C, returning damaged memory locations to full working order. Author Laura Hopperton Comment on this article Websites http://www.macronix.com/ This material is protected by MA Business copyright See Terms and Conditions. One-off usage is permitted but bulk copying is not. For multiple copies contact the sales team. What you think about this article: Add your comments Name Email Comments Your comments/feedback may be edited prior to publishing. Not all entries will be published. Please view our Terms and Conditions before leaving a comment.
03 December 2012 Self-healing nand flash can survive 100million cycles Self-healing nand flash can survive 100million cycles Researchers in Taiwan have found a way to 'heal' nand flash memory modules to make them last 100million cycles. The team, from electronics firm Macronix, made the breakthrough by redesigning the chips to put a heater alongside the memory material that holds the data. For this they borrowed a solution from a competing technology, phase change ram (PCRAM). In PCRAM, a bit is stored in a material called a chalcogenide glass, which can be either conductive or insulating. The bit's material switches between those states when briefly heated in a particular way. The researchers noticed that heating the glass to its melting point had a kind of healing effect on the PCRAM modules, and figured a similar technique would work for flash. As such, they altered the gate electrodes so that the device could carry current to heat the memory cells. They then added into the mix a number of diodes. According to researcher Hang Ting Lue, it was this modified structure that enabled current to pass through the transistor's gate to generate pulses of heat about 800°C, returning damaged memory locations to full working order. Author Laura Hopperton Comment on this article Websites http://www.macronix.com/ This material is protected by MA Business copyright See Terms and Conditions. One-off usage is permitted but bulk copying is not. For multiple copies contact the sales team. What you think about this article: Add your comments Name Email Comments Your comments/feedback may be edited prior to publishing. Not all entries will be published. Please view our Terms and Conditions before leaving a comment.
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