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Fab 4 set to help meet NAND demand

Toshiba and SanDisk have opened Fab 4 – the latest 300mm facility at Toshiba’s Yokkaichi site – with a traditional ceremony. Fab 4 is expected to start production in December, reaching a capacity of 80,000 wafers a month later next year.

Fab 4 will produce devices on a 56nm process at start-up, with a gradual transition to 43nm from March 2008. The fab – built in response to growing demand for NAND flash – has the potential to produce 210,000 wafers per month.
“Toshiba and SanDisk are delighted to celebrate the construction of this new facility,” said Shozo Saito, president and ceo of Toshiba’s Semiconductor Company. “Fab 4 will feature world class manufacturing capabilities, both in scale and productivity. It will support us in reinforcing our leadership in the fast growing global market for higher density NAND flash memories, and provide a powerful engine of growth for both companies.”

Graham Pitcher

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