Rohm unveils 4th gen 1.2kV SiC MOSFETS

ROHM has announced 4th Generation 1200V SiC MOSFETs optimised for automotive powertrain systems, including the main drive inverter, as well as power supplies for industrial equipment.

According to ROHM, for power semiconductors there is often a trade-off relationship between lower ON resistance and short-circuit withstand time, which is required to strike a balance for achieving lower power losses in SiC MOSFETs.

ROHM has been able to successfully improve this trade-off relationship and reduce ON resistance per unit area by 40% over conventional products, but without sacrificing short-circuit withstand time by further improving an original double trench structure.

In addition, ROHM has been able to significantly reduce the parasitic capacitance (which is a problem during switching) making it possible to achieve 50% lower switching loss over our previous generation of SiC MOSFETs.

As a result, ROHM’s new 4th Generation SiC MOSFETs are capable of delivering low ON resistance with high-speed switching performance, contributing to greater miniaturization and lower power consumption in a variety of applications, including automotive traction inverters and switching power supplies.

Bare chip samples have been made available from June 2020, with discrete packages to be offered in the future.