Toshiba starts construction of Fab 6 and Memory R&D Centre

Construction has started of Toshiba’s semiconductor fabrication facility, Fab 6, and the Memory R&D Centre, at Yokkaichi Operations in Mie prefecture, which is the company’s main memory production base.

Fab 6 will be dedicated to the production of BiCS FLASH – a structure that stacks Flash memory cells on a silicon substrate. It is said to realise significant density improvements over planar NAND Flash memory, where cells are formed on the substrate.

Like Fab 5, construction will take place in two phases, allowing the pace of investment to be optimised against market trends, with completion of Phase 1 scheduled for summer 2018.

The company will also construct a Memory R&D Centre adjacent to the new fab, with completion targeting December 2017. The facility will advance development of BiCS FLASH and new memories.