Samsung Electronics has announced what it claims to be the industry's first mass production of a 30nm class asynchronous ddr nand Flash.
The 32Gb multilevel cell nand memory has an asynchronous double data rate (ddr) interface and Samsung says it will raise the read performance of mobile devices requiring high speeds and large amounts of storage space. The chip, which reads at 133Mbps has been designed to replace single data rate (sdr) mlc nand, which has an overall read performance of 40Mbps. It can be used in SSDs for pcs, premium sd memory cards for smartphones and in Samsung's proprietary moviNand memory. While the memory is said to be suitable for personal media players and car navigation systems. Soo-In Cho, executive vice president and general manager of the memory division at Samsung Electronics, said: "With the new ddr mlc nand, double data rate transmission can be achieved without increasing power consumption, giving designers a lot more latitude in introducing diverse ce devices. Samsung's accelerated push toward providing memory solutions at much higher speeds will enable faster introduction of high performance mobile devices that deliver added convenience and greater value to consumers." According to Samsung, use of 30nm class ddr nand enables premium memory cards to register 60Mbps read speeds, at least a 300% performance gain compared to sdr nand based memory cards with an average 17Mbps read speed. And the company expects mass production to substantially raise the portion of nand flash production devoted to high density consumer electronics (32GB and above) to accommodate increased video sharing.