Part of the extensive line of high-performance SiC FETs, this fourth-generation family of devices offers industry-leading figures of merit in on-resistance, making them suitable for power solutions in mainstream 800 V bus architectures in applications such as on-board chargers for EVs, industrial battery chargers, industrial power supplies, and DC-DC solar inverters.
The UF4C/SC SiC FETs provide designers with multiple on-resistance and package options. The 1200 V SiC FETs are offered in versions with on-resistance (RDS(on)) values of 23 mΩ to 70 mΩ and either a three-lead TO-247-3L package or a four-lead TO-247-4L package. The TO-247-4L package incorporates a Kelvin gate to deliver ultra-low gate charge and exceptional reverse recovery characteristics, enabling designers to switch inductive loads and any application requiring a standard gate drive.
All the devices in the UF4C/SC family can be safely driven with standard 0 V to 12 V or 15 V gate drive voltage, creating a suitable replacement for silicon IGBTs, FETs, or super-junction devices without changing the gate drive voltage.
Other features include an exceptional threshold noise margin preserved with a true 5 V threshold voltage, excellent reverse recovery, and a built-in ESD gate protection clamp.