09 May 2012
ON Semiconductor announces high efficiency igbts
ON Semiconductor has introduced a new series of field stop insulated gate bipolar transistors (igbts) optimised to enable high performance power conversion solutions in applications such as small kitchen appliances.
The 1200V rated NGTB15N120, NGTB20N120 and NGTB25N120 utilise deep trench technology and state of the art wafer thinning and processing techniques to enable very low turn off losses while maintaining a low ON state voltage during turn on, resulting in lower switching and conduction losses.
The devices are offered with 15, 20 and 25A current ratings and are packaged with a low forward drop and soft recovery fast rectifier, which the company says will meet customer requirements while being space efficient.
John Trice, senior director and general manager for ON Semiconductor's power discrete division, said: "The new 1200V series of high performance IGBTs leverages our intellectual property and competencies in high voltage trench and wafer processing technologies while providing customers in a broad range of market sectors with a high quality and robust solution for their demanding power applications."
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