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TRENCHSTOP IGBT7 and EC7 diode

Infineon Technologies has unveiled the 1200 V TRENCHSTOP IGBT7 and emitter-controlled EC7 diode.

The IGBTs provide for higher power density, lower system cost, and reduced system size. Packaged in Easy housing, the power module fits the needs of industrial drives applications.

Based on the micro-pattern trench technology, the TRENCHSTOP IGBT7 chip performs with much lower static losses compared to the IGBT4. Its on-state voltage is reduced by 20 per cent. This brings loss reduction in the application, especially for industrial drives, which usually operate at moderate switching frequencies. The power modules feature a maximum allowed overload junction temperature of 175°C. Additionally, they are marked by softer switching and an improved controllability.

The new 1200 V TRENCHSTOP IGBT7 modules are designed with the same pin out as TRENCHSTOP IGBT4 modules, which supports manufacturers in reducing their design efforts. More importantly, the new modules enable a higher output current in the same package, or the similar output current in a smaller package. As a result, designers can realise more compact inverter designs where needed. All module types are equipped with Infineon’s reliable PressFit mounting technology for low ohmic resistance and reduced process time.


Author
Bethan Grylls

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