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Rohm claims industry's first power mosfet with internal SiC SBD

Rohm claims industry's first power mosfet with internal SiC SBD
Rohm claims industry's first power mosfet with internal SiC SBD

Rohm Semiconductor has unveiled a second generation 1200V silicon carbide (SiC) power mosfet designed for inverters and converters in power conditioners for industrial devices and photovoltaic power generation.

The company claims the SCH2080KE is the industry's first SiC power mosfet to successfully integrate an SiC SBD into a single package.

The device is designed to overcome the reliability problems commonly encountered by SiC power mosfets by improving processes related to crystal defects and device structure. It also reduces ON resistance per unit area by approximately 30% compared to conventional products, leading to increased miniaturisation.

By using new mounting technology, the device also features an integrated SiC SBD, which minimises forward voltage. As a result, the SCH2080KE is said to reduce operating power loss by 70% or more compared to Si igbt used in general inverters. This not only provides lower switching loss, but also enables compatibility with smaller peripheral components by supporting frequencies above 50kHz.

Author
Simon Fogg

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