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Microchip announces production release of Silicon Carbide (SiC) for power products

Microchip, via its Microsemi subsidiary, has announced the production release of a family of SiC power devices that combined the ruggedness and performance benefits of wide-bandgap technology.

These products meet the need to improve system efficiency, robustness and power density in Electric Vehicles (EVs) and other high-power applications in the industrial, aerospace and defence markets.

Microchip’s 700V SiC MOSFETs and 700V and 1200V SiC Schottky Barrier Diodes (SBDs) join its existing portfolio of SiC power modules. The broad family of SiC die, discretes and power modules are offered across a range of voltage, current ratings and package types.

Microchip’s SiC MOSFETs and SBDs offer more efficient switching at higher frequencies and pass ruggedness tests at levels considered critical for guaranteeing long-term reliability.

Microchip is just one of a few suppliers that are able to provide a range of both silicon and SiC discrete and module solutions. The company’s products are intended for the growing number of EV systems including external charging stations, onboard chargers, DC-DC converters and powertrain/traction control solutions. The new SiC devices are backed by Microchip’s customer-driven obsolescence practice, which ensures devices will continue to be produced for as long as customers need them.

The expanded SiC portfolio is supported by a range of SiC SPICE models, SiC driver board reference designs and a Power Factor Correction (PFC) Vienna reference design. All the company’s SiC products are available in production volumes along with their associated support offerings. A variety of die and package options are available for the SiC MOSFETs and SiC diodes.


Author
Neil Tyler

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