comment on this article

Infineon scales up 1200 V CoolSiC MOSFET production

Infineon enters high volume production of a portfolio of 1200 V CoolSiC MOSFET devices.

The devices are rated from 30 mΩ to 350 mΩ and implemented into TO247-3 and TO247-4 housings. The expansion includes a surface mount device (SMD) portfolio and a 650 V CoolSiC MOSFET product family, both to be launched soon.

With these products, Infineon says it will be addressing the fast growing demand for energy-efficient silicon carbide (SiC) solutions in power conversion schemes such as battery charging infrastructure, energy storage solutions and photovoltaic inverters.

The new discrete devices build on a trench SiC MOSFET semiconductor process, developed to allow for both low losses in the application and high reliability in operation. Furthermore, according to related application profiles, gate-source operating voltages are adopted for discrete package solutions. A benchmark low dynamic loss is said to enable high efficiency with a simple unipolar gate drive scheme.

CoolSiC trench technology features an exclusively high threshold voltage rating (V th) larger than 4 V combined with a low Miller capacitance. For this reason, Infineon says the CoolSiC MOSFETs exhibit best-in-class immunity against unwanted parasitic turn-on effects compared to other SiC MOSFETs on the market.

Together with a turn-on gate-source voltage of +18 V with 5 V margin to maximum rated voltage of +23 V, Infineon adds that the SiC discrete MOSFETs deliver an advantage over silicon (Si) IGBTs, super-junction MOSFETs as well as over other SiC MOSFETs at highest level.

Including a robust body diode rated for hard commutation, the CoolSiC MOSFET portfolio is designed to offer engineers a pathway for highest energy efficiency and making “more out of less”.

Author
Bethan Grylls

Comment on this article


This material is protected by MA Business copyright See Terms and Conditions. One-off usage is permitted but bulk copying is not. For multiple copies contact the sales team.

What you think about this article:


Add your comments

Name
 
Email
 
Comments
 

Your comments/feedback may be edited prior to publishing. Not all entries will be published.
Please view our Terms and Conditions before leaving a comment.

Related Articles