30 April 2012 High voltage ic can drive 1200V igbt power modules Mitsubishi Electric has introduced a high voltage integrated circuit to drive igbt power modules dedicated to 400V ac lines. The M81738FP is suitable for 1200V class igbt devices and is said to have industry leading high noise immunity and the capability to withstand voltage undershoots. The ic features a 1200V divided reduced surface field structure that relaxes the surface electric field strength and provides high reliability by stabilisation of the blocking voltage capability. The high latch up immunity from the previous M81019FP device has also been improved by low impedance buried layer structures. As well as being compatible with the previous generation of chips, the new device features a built in protection circuit that enables it to withstand voltage surges during operation. Author Simon Fogg Comment on this article Websites http://www.mitsubishielectric.com/ Companies Mitsubishi Electric Europe BV This material is protected by Findlay Media copyright See Terms and Conditions. One-off usage is permitted but bulk copying is not. For multiple copies contact the sales team. Enjoy this story? People who read this article also read... Southern Manufacturing This year, Southern Manufacturing and Electronics is set to be ... Read Article Claire Jeffreys, NEW Claire Jeffreys, events director, National Electronics Week, ... Read Article Shaping NPL's future The Universities of Strathclyde and Surrey have been named as ... Read Article NIDays 2013 NIDays is a technical conference designed specifically for ... Read Article What you think about this article: Add your comments Name Email Comments Your comments/feedback may be edited prior to publishing. Not all entries will be published. Please view our Terms and Conditions before leaving a comment.