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Fully encapsulated Dual 30A and Single 33A digital power modules

Two fully encapsulated digital DC/DC PMBus power modules have been announced by Renesas Electronics, which it claims deliver the highest power density and efficiency in their class.

According to Renesas, the dual ISL8274M operates from a 5V or 12V power rail and provides two 30A outputs and up to 95.5% peak efficiency in a 18mm x 23mm2 footprint. While, the ZL9024M operates from a 3.3V rail and outputs 33A of power in a 17mm x19mm2 footprint.

Both are said to deliver point-of-load conversions for advanced FPGAs, DSPs, ASICs and memory used in servers, telecom, datacom, optical networking and storage equipment. Renesas says that both devices are PMBus-configurable power supplies that include a controller, MOSFETs, inductor and passives encapsulated inside a module that uses Renesas’ proprietary High Density Array (HDA) package.

The ISL8274M and ZL9024M digital power modules apparently also provide a single clock cycle fast transient response to output current load steps common in FPGAs and DSPs that process power bursts.

The ‘compensation-free’ design is said to keep the modules stable regardless of output capacitor changes, eliminating the need for an external discrete compensation network, saving board space and additional bill of material cost.

Renesas say that the ISL8274M supports input voltages from 4.5V to 14V, while the ZL9024M accepts input voltages from 2.75V to 4V. Both modules offer adjustable output voltages as low as 0.6V.

The HDA package aims to offer ‘unmatched’ electrical and thermal performance through a single-layer conductive substrate, which is designed to reduce lead inductance and dissipate heat primarily through the system board.

The HDA’s copper lead-frame structure should allow the modules to operate at full load over a wide temperature range with no airflow or heatsinks.

The ISL8274M and ZL9024M also provide several protective features, which Renesas claim will ensure safe operations under abnormal operating conditions and further enhancing the devices’ robustness and reliability.

Bethan Grylls

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