23 February 2012

SiGe:C heterojunction bipolar transistor

Renesas Electronics has announced the availability of a new SiGe:C heterojunction bipolar transistor, the NESG7030M04, for use as a low noise amplifier transistor for wireless LAN systems, satellite radios, and similar applications.

This device uses a process that adopts newly developed silicon germanium: carbon (SiGe:C) materials and is said to achieve industry leading low noise performance.

The new SiGe:C HBT is a transistor that amplifies a weak microwave signal received wirelessly to an appropriate level and achieves a noise figure of 0.75dB, which Renesas says is the industry's top level for the 5.8GHz band used by wireless LANs and other applications. The fact that it amplifies with such low noise means that it can increase communication sensitivity in end products. Since it can reduce signal transmission errors, it can achieve operating power consumption as low as one quarter of that of Renesas' existing products while maintaining equivalent performance.

By applying this newly developed SiGe:C process, Renesas' 5.8GHz band SiGe:C HBT and SiGe HBT devices are said to achieve the industry's lowest noise level of 0.75dB. This is an improvement of 0.35dB over earlier Renesas SiGe HBT devices. Also, this device achieves a gain at the minimum noise level of 14dB. This allows communication sensitivity to be increased and signal transmission errors to be reduced, and the new device can achieve equivalent performance to earlier Renesas products at 1/4 of the power consumption.

In earlier silicon based heterojunction bipolar transistors, it was not possible to avoid a reduction in the collector emitter withstand voltage in exchange for reducing noise and this limited the range of applications for which these devices could be used. In this new product, Renesas has optimised the collector base profile, making it possible to guarantee a withstand voltage rating of 4.3V. This increases the range of supply voltages that can be used and enables stable operation over a wide frequency range, from a few MHz to the 14GHz band. This makes it possible to use this device in a wider range of applications. For example, it can support all ISM band applications, including smart grid, smart meter, and home area network (HAN) applications.

Since this transistor was developed for microwave applications, Renesas provides it in an industry standard 4pin thin form mini-moulded package (for which the Renesas package name is M04). As a result, Renesas says the product can contribute to a reduction in manufacturing steps in end user products. Examples include simplifying the mounting evaluation process due to the track record of existing packages; and using an existing circuit board pattern and slightly modifying the surrounding circuits.

At the same time as expanding its product line of bipolar transistors with the industry's best low noise performance by taking advantage of this new process, Renesas is also committed to deploying this new process in the development of microwave ICs and providing further solutions in this area to respond to market needs.

Author
Renesas Electronics

Supporting Information

Websites
http://www.renesas.eu

Companies
Renesas Electronics Europe Ltd

This material is protected by Findlay Media copyright
See Terms and Conditions.
One-off usage is permitted but bulk copying is not.
For multiple copies contact the sales team.

Do you have any comments about this article?


Add your comments

Name
 
Email
 
Comments
 

Your comments/feedback may be edited prior to publishing. Not all entries will be published.
Please view our Terms and Conditions before leaving a comment.

Related Articles

€55m power electronics project

Described as one of the most important European energy efficiency research ...

Processor for wearables

Toshiba's ApP Lite processor provides integrated sensing, data processing and ...

Converters cut space by 50%

The MTU2 series of surface mounted 2W DC/DC converters is claimed to be 50% ...

Power electronics challenges

There isn't a sector of the electronics industry that operates without the use ...

Preview: PCIM Europe 2014

Tim Fryer looks forward to the upcoming PCIM exhibition and conference, taking ...

A/D converters get it right

Successive approximation A/D converters, with resolutions of up to 18bit and ...

Power electronics in EVs

This whitepaper presents a review of power electronics systems in electric ...

EV power electronics

This whitepaper from Altera describes the benefits of using fpga based control ...

Power management ics

This whjitepaper presents various application scenarios where high voltage ...

Shunt voltage reference

The ZXRE330 3.3V shunt voltage reference from Diodes has been introduced to ...

Half and full-bridge drivers

The industry's first small form factor half and full-bridge drivers have been ...

Dual DC/DC converters

Linear Technology has announced the LT8471, a dual DC/DC converter that ...

PCIM Europe 2014 Conference

20th – 22nd May 2014, Nuremburg, Germany

Power management forum

28th October 2014, Williams F1 Centre, Oxford

Class 0.1 metering SoC

Discover TI's Class 0.1, metering System-On-Chip Evaluation Boards: ...

When to use a pre-driver

What is the difference between a pre-driver and an integrated motor driver and ...

Motor diagnostics innovations

Texas Instruments Innovator Tim Adcock explains in the latest whiteboard video ...

Packing a powerful punch

Power is back when it comes to industrial system performance and efficiency. ...

Powering ahead

Too often in the past, electronics industry initiatives have been announced ...

Changing the shape of consumer electronics

Composites have found use in many applications over the years, but they have ...

Terence Watson

Ask Terence Watson about power electronics and you're left in no doubt of his ...

Keith Attwood, ceo, e2v

Many UK based technology companies can trace their origins to the years ...

Rick Clemmer, ceo, NXP

Rick Clemmer believes high performance mixed signal is just one of the sectors ...