30 April 2012

High voltage ic can drive 1200V igbt power modules

Mitsubishi Electric has introduced a high voltage integrated circuit to drive igbt power modules dedicated to 400V ac lines. The M81738FP is suitable for 1200V class igbt devices and is said to have industry leading high noise immunity and the capability to withstand voltage undershoots.

The ic features a 1200V divided reduced surface field structure that relaxes the surface electric field strength and provides high reliability by stabilisation of the blocking voltage capability. The high latch up immunity from the previous M81019FP device has also been improved by low impedance buried layer structures.

As well as being compatible with the previous generation of chips, the new device features a built in protection circuit that enables it to withstand voltage surges during operation.

Author
Simon Fogg

Supporting Information

Websites
http://www.mitsubishielectric.com/

Companies
Mitsubishi Electric Europe BV

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