11 May 2010
C-band GaN HEMT Amplifiers for satellite applications
Mitsubishi Electric is introducing the world's first GaN high electron mobility transistor (HEMT) power amplifiers, exclusively designed for use in satellite applications in the 3.7-4.2GHz band.
Depending on the individual device, the output power of these transistors ranges from 2 to 100W.
Three of the four new devices are internally impedance-matched and specified for the frequency range from 3.7 to 4.2GHz in order to operate in one of the three separated sub-bands with more than 60% efficiency. While the MGFC50G3742S provides an output power of 50dBm (100W) with a linear power gain of 13dB, the output power ratings of MGFC46G3742S and MGFC43G3742S are 46dBm (40W) and 43dBm (20W) respectively, with linear power gains of 14dB for both components.
Mitsubishi Electric says that by using the MGFC50G3742S GaN HEMT amplifier it is possible to achieve an output power of 100W from a single device at the form factor of a conventional 25W GaAs amplifier. The package size of these three new components is 17.4 x 24.0 x 4.3mm.
Another device, dubbed MGF2633GS is not internally impedance-matched, designed specifically for operation at 4.0GHz with an efficiency of 50% while providing an output power of 33dBm (2W) with a linear power gain of 12dB. The MGF2633GS is integrated in a package measuring 2.5 x 8.5 x 2.0mm.
All four new GaN HEMT amplifiers are designed to fulfil the demands of satellite applications requiring an operating time of one million hours at a maximum chip temperature of 175°C and the capability to operate under the severe conditions found in space. According to Mitsubishi, the new transistors offer the possibility to replace expensive travelling wave tube amplifiers by GaN based solid state power amplifiers.
Author
Chris Shaw
Supporting Information
Websites
http://www.mitsubishichips.com
Companies
Mitsubishi Electric Europe BV
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