08 November 2012
X-Fab announces first 200V SOI foundry technology
X-Fab has announced XT018, which it claims is the world's first trench dielectric isolated SOI foundry technology for 200V MOS capability at 180nm.
The company says that using the full dielectric isolation of this modular process allows blocks at different voltage levels to be integrated on a single chip instead of placed on different chips. This reduces the amount of additional components required on pcbs, eliminates latch up and provides built in robustness against electromagnetic interference.
"Our XT018 technology provides exceptional dielectrically isolated high voltage support," commented Sebastian Schmidt, product marketing manager for X-FAB's high voltage product line. "Such isolation makes it easier to design for short innovation cycles, is straightforward, and results in a faster time to market."
XT018 SOI technology is said to be the only foundry process available at 180nm for 100 to 200V applications. It is suitable for consumer, medical, telecommunication infrastructure and industrial applications that need bidirectional isolation.
The technology combines fully isolated MOS transistors for the high voltage drain with a 180nm technology for 1.8/5V I/O and up to six metal layers. It uses a super junction architecture with patented dielectric HV termination for the MOS transistors, allowing compact design with a Ron as low as 0.3Omm² for 100V and 1.1Omm² for 200V nMOS transistors.
The HV MOS transistors are designed to have identical electrical parameters for both low and high side operation.
X-Fab Semiconductor Foundries AG
This material is protected by Findlay Media copyright
One-off usage is permitted but bulk copying is not.
For multiple copies contact the