09 June 2009
Transistors boost basestation efficiency
Infineon has introduced a family of high power ldmos transistors for use in broadband wireless network base stations. With power levels of up to 300W and video bandwidth exceeding 90MHz, the transistors support the high peak to average power ratios and high data rate specifications required for the evolution from 3G to 4G wireless networks.
According to the company, the family achieves higher gain and higher power density than alternative devices operating in the 1.4 to 2.6GHz cellular bands. This allows the use of packages with a 30% smaller footprint to enable smaller and lower cost amplifier designs. High peak power is valuable for Doherty based amplifier designs, it adds, as well as reduction of parts count in other architectures.
"Reducing power amplifier size while delivering excellent power efficiency translates to smaller base stations, which in turn allows manufacturers to offer efficient and green system solutions at an optimized cost," said Helmut Vogler, Infineon's general manager for rf power. "With production release of the initial family of transistors completed, base station providers can turn to Infineon today to meet customer requirements for 4G technology rollouts beginning in 2010."
Illustrating the transistors' potential performance, Infineon suggests a two carrier WCDMA signal at 2.17GHz, 30V, 8dB PAR and 3.84MHz channel bandwidth will have an average power of 50W, a gain of 18dB gain and a 28% efficiency (at a 230W output power).
All PTFB family transistors are offered in open cavity ceramic packages, for bolt down or earless mounting.
Author
Graham Pitcher
Supporting Information
Websites
http://www.infineon.com
Companies
Infineon Technologies AG
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