20 February 2009
ST boosts effiency, shrinks power mosfets
Size and energy consumption are major goals for those designing power conversion systems and STMicroelectronics believes it can help with the launch of the MDmesh V range of power mosfets.
Ian Wilson, general manager of ST’s power mosfet division, said: “What this is doing for customers is allowing new levels of efficiency and power density.”
MDmesh V technology is said to enable a new generation of 650V mosfets, with Rds(on) figures of less than 0.079ohm in compact power packages.
The complete STx42N65M5 family – which will include 35 devices –features a range of package options, including D2PAK, to220FP, I2PAK and TO-247. ST’s roadmap for MDmesh V 650V mosfets includes higher current devices with Rds(on) values as low as 0.022ohms.
Wilson noted the latest version of the MDmesh technology features deep walls which improve the drain structure. “This allows charge to be balanced,” he explained, “bringing a lower Rds(on) for the same breakdown voltage.” This improvement will reduce losses in power factor correction circuits and power supplies, bringing products with better energy ratings.
Author
Graham Pitcher
Supporting Information
Websites
http://www.st.com
Companies
STMicroelectronics
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