14 December 2009
ST announces 'industry's lowest' RDS(On) per die area
STMicroelectronics has added a range of options to its MDmesh V power mosfets with a new device which it says delivers the industry's lowest on state resistance for 650V mosfets.
According to ST, the STW77N65M5 device offers an RDS(ON) of 38mOhm in the TO-247 package. ST also plans to introduce the STY112N65M5 with RDS(On) of 22mOhm in the Max247 package during 2010.
ST's marketing director, Power MOSFET Division, Maurizio Giudice, said: "The MDmesh V family combines proprietary fifth generation super junction technology with our proven PowerMESH horizontal layout, giving superior performance compared to the competing devices. The industry's lowest RDS(On) per die area delivers efficiency advantages in any package style. Designers can use this superiority to improve performance and reduce overall size by replacing multi-parallel networks of conventional MOSFETs with a far smaller number of MDmesh V devices."
Designed for applications where conduction loss has a major influence over efficiency, typical applications include pc and server power supplies, solar power converters, welding power supplies and UPS equipment.
Author
Chris Shaw
Supporting Information
Websites
http://www.st.com/mdmeshv
Companies
STMicroelectronics NV
This material is protected by Findlay Media copyright
See Terms
and Conditions.
One-off usage is permitted but bulk copying is not.
For multiple copies contact the
sales team.