08 February 2007

Screen breakthrough to boost capacity

Hitachi Europe, along with Hitachi’s R&D division, has developed a manufacturing technology suitable for producing low temperature polysilicon on existing amorphous TFT production lines. The development will increase production capacity for high quality vga displays.

The approach allows the function of low temperature polysilicon to be added to a section of the amorphous tft. This allows production capacity to be increased without requiring major investment.
According to the companies, the new manufacturing technology allows silicon crystallisation and transverse growth of crystal grains at the same time by applying a solid laser only to the parts requiring large electron movement, such as the surrounding embedded circuit in the amorphous TFT substrate.
Crystal regions can be formed in place on a large glass substrate with better crystal quality in a shorter period of time than those in the low temperature polysilicon process using a typical excimer laser.
The technology will be used for commercial production by the end of this year at the Mobara City facility in Japan, which produces 730 x 920mm substrates. Once the system is in operation, the capacity of the existing low temperature polysilicon production line will be increased by 1million units.

Graham Pitcher

Supporting Information


Hitachi Europe Ltd

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