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ReRAM prototype achieves 64Mb memory array operation

ReRAM prototype achieves 64Mb memory array operation
ReRAM prototype achieves 64Mb memory array operation

Elpida Memory has developed its first high speed non volatile resistance memory (ReRAM) prototype using a 50nm process technology, with a memory cell array operation of 64Mb – one of the highest densities possible for ReRAM.

ReRAM is next generation semiconductor memory technology that uses material which changes resistance in response to changes in the electric voltage. It can store data even when the power supply is turned off and can read/write data at high speeds using little voltage. While DRAM is superior to existing non-volatile memory with respect to read/write speeds and endurance, it quickly loses data when the power supply is removed. NAND flash memory retains data even when the power is removed but has performance measures that are inferior to DRAM. ReRAM is a type of semiconductor material that contains the advantages of both DRAM and NAND flash memory. It has a write speed of 10ns, about the same as DRAM, and write endurance of more than 1million times – 10 times greater than NAND flash.

Elpida says it plans to continue development toward a 2013 goal of volume production of ReRAM in the gigabit capacity, using a 30nm process technology. If the high speed durable new memory can be provided at low cost, Elpida believes it will contribute enormously to a reduction of memory power consumption. This could make it an attractive storage option in a variety of information technology products, such as smartphones, tablets and ultra thin light notebook pcs.

The DRAM manufacturer developed the prototype with New Energy and Industrial Technology Development Organisation (NEDO), a Japanese funded public institution. Further work is being conducted with Sharp, the National Institute of Advanced Industrial Science and Technology and the University of Tokyo.

Author
Chris Shaw

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