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Plessey begins sampling 350mW GaN-on-Si leds

Plessey has begun sampling 350mW GaN on silicon leds. Aimed at a variety of solid state lighting products, the entry level devices have been manufactured on 6in GaN-on-Si substrates and were created at the firm's Plymouth fab using its MAGIC (Manufactured on GaN I/C) line.

Barry Dennington, Plessey's coo, said: "The MAGIC led product range is expanding in both light output and efficacy. The PLB010350 is our first high current device operating at anywhere from 350mA through to 2A in pulse applications.

"We have also been able to demonstrate the versatility and the potential of the Plessey GaN-on-Si technology by constructing an led with a relatively large die area. This new 350mW product demonstrates the inherent flexibility we have for the manufacture of leds with a 6in GaN-on-Si substrate in an ic manufacturing line."

According to Dennington, the company is seeing continual improvement in output efficiencies in the lab, and will continue to launch new products in line with its release plan

Author
Laura Hopperton

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