24 June 2009

Phase change memory collaboration

  • Phase change memory collaboration

Samsung Electronics and Numonyx have combined forces to develop market specifications for a next generation memory technology designed to help enable manufacturers meet the increasing performance and power demands for platforms loaded with content and data.

According to the two companies, the phase change memory (PCM) products produce fast read and write speeds at lower power than conventional NOR and NAND flash memory, and allow for bit alterability normally seen in RAM.

SeiJin Kim, vice president, mobile memory technology planning and enabling, Samsung Electronics, said: "Our joint efforts with Numonyx will enable a more secure path for introducing PCM into the mobile environment. We anticipate that PCM will eventually be a major addition to our family of memory products, one that will nicely compliment our other mobile memory solutions and ultimately increase our leadership in the industry."

Numonyx; president and ceo, Brian Harrison, added: "This is a significant milestone for both the development of PCM and for the overall memory market. The collaboration between two memory industry leaders… is helping to provide the kind of direction and clarity that is often needed when new technologies are introduced. The common specifications will enable chipset vendors and others in the ecosystem to standardise and more easily support the delivery of a new generation of memory technology that will benefit not only handset OEMs, but also manufacturers of embedded systems and high-end computing devices, and their customers."



Author
Chris Shaw

Supporting Information

Websites
http://www.numonyx.com
http://www.samsung.com

Companies
Samsung Electronics (UK) Ltd

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