19 April 2012
Nanodot based memory sets new world speed record
Researchers from Taiwan and the University of California, Berkeley, have harnessed nanodots to create a new electronic memory technology that can write and erase data up to 100 times faster than today's mainstream charge storage memory products.
The new system uses a layer of non conducting material embedded with discrete silicon nanodots, each approximately 3nm across. Each nanodot functions as a single memory bit. To control the memory operation, this layer is then covered with a thin metallic layer, which functions as a metal gate. The metal gate controls the on and off states of the transistor.
"The metal gate structure is a mainstream technology on the path toward nanoscale cmos memory technology," said Jia-Min Shieh, a researcher at the National Nano Device Laboratories in Hsinchu, Taiwan. "Our system uses numerous, discrete silicon nanodots for charge storage and removal. These charges can enter (data write) and leave (data erase) the numerous discrete nanodots in a quick and simple way."
The researchers were able to achieve this new milestone in speed by using ultra short bursts of green laser light to selectively anneal (activate) specific regions around the metal layer of the metal gate of the memory. Since the sub millisecond bursts of laser light were so brief and so precise, they were able to accurately create gates over each of the nanodots. This method of memory storage is particularly robust, the researchers claim, because if an individual charge in one of the nano sites failed, it would barely influence the others. This enables a stable and long- lived data storage platform.
"The materials and the processes used for the devices are also compatible with current mainstream integrated circuit technologies," explains Shieh. "This technology not only meets the current cmos process line, but can also be applied to other advanced structure devices."
This material is protected by Findlay Media copyright
One-off usage is permitted but bulk copying is not.
For multiple copies contact the