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Mosfets optimised for low on resistance

Vishay Intertechnology has added two devices to ita TrenchFET Gen III p-channel power mosfet range. According to the company, the SiS334DN is the first -40V p-channel Gen III device, while the SiSS27DN is the first -30V mosfet available in the PowerPAK 1212-8S package.

The SiS443DN and SiSS27DN are optimized for 24V, 19V, and 12V load switches, as well as adaptor and battery switches in a range of applications, including power management in mobile computing, smartphones, and tablets. The devices' low on resistance is said to allow designers to achieve lower voltage drops in their circuits and to promote more efficient use of power and longer battery run times.

In applications requiring a higher voltage rating, the SiS443DN provides a maximum on resistance of 11.7mO (-10V) and 16mO (-4.5V) in the 3.3 x 3.3mm PowerPAK 1212-8 package. When on resistance is critical, the SiSS27DN offers values of 5.6mO (-10V) and 9mO (-4.5V) in the 0.75mm profile PowerPAK 1212-8S package.

Author
Graham Pitcher

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