20 November 2009
MOSFET and schottky diode only 0.55mm high
Fairchild Semiconductor's latest mosfet and schottky diode is available in what the company claims is an 'industry leading low profile package'.
The integrated P Channel PowerTrench mosfet and schottky diode has been designed as a single MicroFET thin package to meet efficiency and thermal requirements in battery charging and power multiplexing applications.
According to Fairchild, the FDFMA2P859T provides power dissipation and conduction loss characteristics, while providing a 30% height reduction over the industry standard 0.8mm MicroFET package. The package height of 0.55mm means it is suitable for low profile designs, such as portable cell phones, media players and medical devices.
The device's thermal performance, says Fairchild, enables a low reverse leakage current of 1µA at Vr=10V for the schottky diode. Compared with linear mode battery charging and power multiplexing applications, Fairchild claims that it offers both improved performance and efficiency.
Author
Chris Shaw
Supporting Information
Websites
http://www.fairchildsemi.com
Companies
Fairchild Semiconductor
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