03 November 2011 Isolated gate driver is first to target high density power converters Isolated gate driver is first to target high density power converters High temperature semiconductor specialist, Cissoid has announced what it claims to be the first isolated gate driver solution to drive high temperature power transistors. The new platform, dubbed Hades, consists of a reference design and an evaluation board, and is said to let system engineers develop more efficient power converters that are 5x smaller and lighter. According to Cissoid, the solution can seamlessly drive two SiC mosfet power switches on a dc bus voltage up to 1200V. It is also designed to switch them at high frequencies, enabling smaller and lighter passive and magnetic components. Due to the fact that it can sustain high temperatures, Cissoid says the platform can be located next to the power transistors to reduce parasitic capacitances and inductances, further improving the associated losses and delays in the system. The reference design is scalable up to +/-20A gate current, while the evaluation board features +/-4A. A specific board flavour for normally-On JEFTs is also available. Author Laura Hopperton Comment on this article Websites http://www.cissoid.com This material is protected by MA Business copyright See Terms and Conditions. One-off usage is permitted but bulk copying is not. For multiple copies contact the sales team. What you think about this article: Add your comments Name Email Comments Your comments/feedback may be edited prior to publishing. Not all entries will be published. Please view our Terms and Conditions before leaving a comment.