24 February 2010
IR unveils first commercially available GaN devices
International Rectifier has launched the first range of commercial integrated power stage products utilising its Gallium Nitride (GaN) based power device technology platform.
The iP2010 and iP2011 range is designed for multiphase and point of load (POL) applications including servers, routers, switches and general purpose POL dc/dc converters.
The iP2010 and iP2011 integrate a PowIRtune driver ic matched to a multi-switch monolithic GaN based power device. The devices are mounted in a flip chip package platform and, according to IR, more than double the switching frequency of silicon based integrated power stage devices.
John Lambert, IR's POL product manager, said: "With a switching capability up to 5MHz, the iP201x family enables designers to dramatically reduce the value and size of output capacitors and inductors where space is at premium. The devices can also be configured to operate at a lower switching frequency for applications that require the highest possible efficiencies."
The iP2010 features an input voltage range of 7 to 13.2V and output voltage range of 0.6 to 5.5V with an output current up to 30A. The device operates up to 3MHz. Operating up to 5MHz, the pin compatible iP2011 features the same input and output voltage range, but is optimised for an output current up to 20A.
Author
Chris Shaw
Supporting Information
Websites
http://www.irf.com
Companies
International Rectifier
This material is protected by Findlay Media copyright
See Terms
and Conditions.
One-off usage is permitted but bulk copying is not.
For multiple copies contact the
sales team.