17 July 2012 EpiGaN starts 8in GaN-on-Si development on Aixtron reactors EpiGaN starts 8in GaN-on-Si development on Aixtron reactors Deposition equipment provider Aixtron has announced that Imec spin off EpiGaN has commissioned two new MOCVD systems, able to operate either in multiple 6in or 8in configuration. The company will use the systems to commercialise 6in GaN-on-silicon wafers for a range of power and RF electronics devices as well as develop the next generation of 200mm GaN-on-silicon wafers. "After several years of efficient joint collaboration with Aixtron towards GaN-on-Si, it was evident that these CCS systems from Aixtron perfectly suit our needs," commented ceo of EpiGaN, Dr Marianne Germain. "The EpiGaN team has worked with Aixtron CCS MOCVD systems at imec and we have jointly published numerous papers on GaN-on-Silicon development. "There are challenges ahead for high voltage 200mm GaN-on-Si, but we are confident that the combination of our enduring expertise and the leading edge equipment and process technology from our partner Aixtron will deliver all our objectives rapidly and efficiently." Author Simon Fogg Comment on this article Websites http://www.aixtron.comhttp://www.epigan.com/ Companies Aixtron Ltd This material is protected by MA Business copyright See Terms and Conditions. One-off usage is permitted but bulk copying is not. For multiple copies contact the sales team. What you think about this article: Add your comments Name Email Comments Your comments/feedback may be edited prior to publishing. Not all entries will be published. Please view our Terms and Conditions before leaving a comment.