24 January 2012

Engineered GaN substrates, major breakthrough announced

Two companies claim to have reached a major milestone in the development of four and six inch engineered gallium nitride (GaN) substrates. There are now plans to launch pilot production lines.

Semiconductor materials specialists Soitec (Euronext) and Sumitomo Electric Industries produced the substrates by transferring ultra thin high quality GaN layers from a single GaN wafer to produce multiple engineered GaN substrates. Both companies say the substrates are suitable for manufacturing advanced high brightness leds for the lighting market and power efficient controllers for the electric vehicles and energy markets.

Sumitomo originally combined its GaN wafer manufacturing technology with Soitec's Smart Cut layer transfer technology in a joint development programme to produce two inch wafers. Having successfully achieved this, they plan to invest and establish pilot production lines in Japan and France, to initially fabricate four inch wafers - with six inch wafer production scheduled to quickly follow. Sumitomo will manufacture bulk free standing GaN substrates in Japan for shipment to France, where Soitec will apply its Smart Cut layer transfer process to generate the final engineered wafers with the same thermal expansion as GaN wafers. The resulting wafers, claim the two companies, have low density, enabling the manufacture of advanced semiconductor devices at lower costs than bulk GaN wafers.

Frédéric Dupont, vice president of Soitec's Specialty Electronics Business Unit, said: "Our partnership's successful demonstration of four and sic inch engineered GaN substrates' scalability is a critical milestone, accomplished by applying very strong innovative capabilities from both sides. The advanced substrates we are developing will allow the introduction of a new materials platform with novel and advanced functionalities."

Yoshiki Miura, general manager of the Compound Semiconductor Materials Division at Sumitomo Electric, added: "With layer transfer technology's production readiness now proven for larger wafers, the substrates can be made even more cost effectively for large volume production. We look forward to continuing our successful collaboration with Soitec to fulfill the requirements of the led and energy markets, which represent amazing business opportunities."

Chris Shaw

Supporting Information


Sumitomo Electric Europe

This material is protected by Findlay Media copyright
See Terms and Conditions.
One-off usage is permitted but bulk copying is not.
For multiple copies contact the sales team.

Do you have any comments about this article?

Add your comments


Your comments/feedback may be edited prior to publishing. Not all entries will be published.
Please view our Terms and Conditions before leaving a comment.

Related Articles

Toshiba starts 15nm flash

Toshiba is to commence 15nm NAND flash production at the end of the month at ...

£2.75m for feasibility studies

The Technology Strategy Board, Invest Northern Ireland and Highlands and ...

Amp works at 50% efficiency

Researchers from the Universities of Bristol and Cardiff have created an ...

Down to the wire

Once the plain old telephone service, the role of the telephone wire continues ...

Within touching distance

Graphene is starting to filter onto the market. HEAD claims its tennis racquets ...

Making light work of photonics

Today's world is permeated by electronics, from industry to communications, ...

NI Trend Watch 2014

This report from National Instruments summarises the latest trends in the ...

Capactive sensing

This whitepaper looks at a number of capacitive sensing applications to ...

Transparent Electronics Market

Emerging market opportunity analyst, NanoMarkets, believes that three major ...

Embedded World: Avnet Memec

Avnet Memec has announced it will be launching a new energy harvesting ...

Junction box from TE

TE Connectivity has released a new low profile junction box for BIPV ...

LDOs minimise board space

ON Semiconductor has announced the introduction of five small package, low ...

BEEAs 2013

9th October 2014, 8 Northumberland, London

Self-destructing electronics

Researchers at Iowa State University have created transient electronics that ...

MEMS switch for 'true 4G'

General Electric has created a 3GHz RF MEMS switch that can handle up to 5kW of ...

Smart fabrics developed at NPL

NPL has developed a new method to produce conductive textiles. The technique ...

Electronic charge to 800mph

Breaking the land speed record would require a very special blend of latest ...

Flash drives semi technologies

Demand for NAND flash is said to be growing at 45% per year, driven mainly by ...

Top tech trends for 2013

Bee Thakore, European technical marketing manager for element14, gives an ...

Nathan Hill, director, NGI

Research into graphene won Andre Geim and Kostya Novoselov the Nobel prize in ...

Brent Hudson, Sagentia

Sagentia's ceo tells Graham Pitcher how the consulting company is anticipating ...

Prof Donal Bradley, Imperial

Graham Pitcher talks to a researcher who was 'there at the start' of the ...