13 November 2012
electronica 2012: Everspin debuts first 64Mb spin-torque MRAM
Everspin Technologies has launched what it claims to be the industry's first 64Mb spin-torque magnetoresistive ram (ST-MRAM).
The company, which spun out of Freescale Semiconductor in 2008, believes this new type of non volatile memory will transform storage architecture and help drive the continuous evolution of Moore's Law, due to its low latency and high endurance.
Its first product to be launched is the EMD3D064M, a 64Mb ddr3 ST-MRAM designed to achieve ultra low latency, increase reliability with high cycling endurance and protect data in the event of power loss.
"Data has transcended from being a buzzword to where it's an invaluable commodity," said Everspin's president and ceo Phill LoPresti. "At the heart of the data revolution is the issue of how to store, manage and retain it securely, efficiently and cost effectively.
"Our first ST-MRAM product has the potential to carry today's high performance storage systems to greater heights. We are collaborating with select customers to allow them to evaluate and take advantage of spin-torque MRAM technology sooner and to gather feedback that will help us finalise our 64Mb ddr3 ST-MRAM for production."
Everspin's proprietary spin-torque technology uses a spin-polarised current for switching. Data is stored as a magnetic state versus an electronic charge, providing a non volatile memory bit that does not suffer wear out or data retention issues associated with flash technology.
The EMD3D064M is functionally compatible with the industry standard JEDEC specification for the ddr3 interface, which delivers up to 1600million transfers per second per I/O, translating to memory bandwidth of up to 3.2GBytes/s.
Author
Laura Hopperton
Supporting Information
Websites
http://everspin.com/spinTorqueMRAM.php
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