13 November 2012

electronica 2012: Everspin debuts first 64Mb spin-torque MRAM

Everspin Technologies has launched what it claims to be the industry's first 64Mb spin-torque magnetoresistive ram (ST-MRAM).

The company, which spun out of Freescale Semiconductor in 2008, believes this new type of non volatile memory will transform storage architecture and help drive the continuous evolution of Moore's Law, due to its low latency and high endurance.

Its first product to be launched is the EMD3D064M, a 64Mb ddr3 ST-MRAM designed to achieve ultra low latency, increase reliability with high cycling endurance and protect data in the event of power loss.

"Data has transcended from being a buzzword to where it's an invaluable commodity," said Everspin's president and ceo Phill LoPresti. "At the heart of the data revolution is the issue of how to store, manage and retain it securely, efficiently and cost effectively.

"Our first ST-MRAM product has the potential to carry today's high performance storage systems to greater heights. We are collaborating with select customers to allow them to evaluate and take advantage of spin-torque MRAM technology sooner and to gather feedback that will help us finalise our 64Mb ddr3 ST-MRAM for production."

Everspin's proprietary spin-torque technology uses a spin-polarised current for switching. Data is stored as a magnetic state versus an electronic charge, providing a non volatile memory bit that does not suffer wear out or data retention issues associated with flash technology.

The EMD3D064M is functionally compatible with the industry standard JEDEC specification for the ddr3 interface, which delivers up to 1600million transfers per second per I/O, translating to memory bandwidth of up to 3.2GBytes/s.

Author
Laura Hopperton

Supporting Information

Websites
http://everspin.com/spinTorqueMRAM.php

This material is protected by Findlay Media copyright
See Terms and Conditions.
One-off usage is permitted but bulk copying is not.
For multiple copies contact the sales team.

Do you have any comments about this article?


Add your comments

Name
 
Email
 
Comments
 

Your comments/feedback may be edited prior to publishing. Not all entries will be published.
Please view our Terms and Conditions before leaving a comment.

Related Articles

SRAM consumes 50% less power

Early tests of SureCore's low power SRAM design are said to confirm the results ...

Samsung lifts lid on 20nm DRAM

Samsung has commenced mass production of new DDR3 memory chips made using 20nm ...

Next gen HMC spec launched

A faster and more power efficient specification has been proposed by the Hybrid ...

Boosting processing power

Micron Technology appeared at the 2013 Supercomputing conference, where it ...

Avoid counterfeit electronics

It's been discussed and analysed for years, yet there does not seem to be an ...

Leaving a legacy

What happens to a process technology when it falls behind the leading edge?

Test and repair solution

Many large SoC designs today incorporate several third party IP cores that ...

Transferring Data in Non-Networked ...

Nexus (GB), the UK partner of portable data token manufacturer Datakey ...

Xilinx generic flash memory interface ...

This white paper shows how a generic flash memory interface can be combined ...

EEPROM device for DDR4

Microchip is now shipping a 4Kb I2C serial presence detect EEPROM device, ...

Processors part with ECC

Toshiba Electronics has expanded its range of 24nm BENAND single level cell ...

Serial EEPROM devices

Microchip's new family of serial EEPROM devices come with a unique, ...

DDR memory termination

In the third video of our Power Solution series, product marketing engineer for ...

Android 2.3 embedded designs

Have questions about using Gingerbread for your embedded design? This video ...

PCM puzzle swap demo

This demo will show how PCM's overwrite capability can optimize your subsystem, ...

Flash drives semi technologies

Demand for NAND flash is said to be growing at 45% per year, driven mainly by ...

Flash storage vs. disk drives

The question on everybody's lips within the computer memory industry is whether ...

Claire Jeffreys, NEW

Claire Jeffreys, events director, National Electronics Week, talks with Chris ...

Matthew Trowbridge, Renesas

Matthew Trowbridge, Renesas Technology Europe's ceo speaks with Graham Pitcher

Moshe Gavrielov, ceo, Xilinx

Moshe Gavrielov, Xilinx' president and ceo speaks with New Electronics