19 April 2012 Diodes reduces mosfet off board height by 50% Diodes reduces mosfet off board height by 50% Diodes has launched a new line of N and P channel mosfets in low profile DFN2020-6 packages which are said to be up to 50% thinner than other devices. The DFN2020H4 packaged DMP2039UFDE4, a -25V rated P channel device, has an off board height of 0.4mm and a footprint of 4mm2. Other mosfets in the series are provided in a 0.5mm high DFN2020E package. The DMP2039UFDE4 provides circuit designers with 3kV protection against human borne electrostatic discharge. The low typical RDS(on), said to be just 13mΩ at a VGS of 4.5V for the -12V P channel DMP1022UFDE, means conduction losses can be minimised in battery charging applications. The initial series of nine mosfets is comprised of -12, -20, -25 and -40V P channel and 12, 20 and 60V N channel parts aimed at ultra slim portable product designs. Author Simon Fogg Comment on this article Websites http://www.diodes.com/ Companies Diodes Incorporated This material is protected by MA Business copyright See Terms and Conditions. One-off usage is permitted but bulk copying is not. For multiple copies contact the sales team. What you think about this article: Add your comments Name Email Comments Your comments/feedback may be edited prior to publishing. Not all entries will be published. Please view our Terms and Conditions before leaving a comment.