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Diodes reduces mosfet off board height by 50%

Diodes reduces mosfet off board height by 50%

Diodes has launched a new line of N and P channel mosfets in low profile DFN2020-6 packages which are said to be up to 50% thinner than other devices.

The DFN2020H4 packaged DMP2039UFDE4, a -25V rated P channel device, has an off board height of 0.4mm and a footprint of 4mm2. Other mosfets in the series are provided in a 0.5mm high DFN2020E package.

The DMP2039UFDE4 provides circuit designers with 3kV protection against human borne electrostatic discharge. The low typical RDS(on), said to be just 13mΩ at a VGS of 4.5V for the -12V P channel DMP1022UFDE, means conduction losses can be minimised in battery charging applications.

The initial series of nine mosfets is comprised of -12, -20, -25 and -40V P channel and 12, 20 and 60V N channel parts aimed at ultra slim portable product designs.

Author
Simon Fogg

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