19 April 2012 Diodes reduces mosfet off board height by 50% Diodes reduces mosfet off board height by 50% Diodes has launched a new line of N and P channel mosfets in low profile DFN2020-6 packages which are said to be up to 50% thinner than other devices. The DFN2020H4 packaged DMP2039UFDE4, a -25V rated P channel device, has an off board height of 0.4mm and a footprint of 4mm2. Other mosfets in the series are provided in a 0.5mm high DFN2020E package. The DMP2039UFDE4 provides circuit designers with 3kV protection against human borne electrostatic discharge. The low typical RDS(on), said to be just 13mΩ at a VGS of 4.5V for the -12V P channel DMP1022UFDE, means conduction losses can be minimised in battery charging applications. The initial series of nine mosfets is comprised of -12, -20, -25 and -40V P channel and 12, 20 and 60V N channel parts aimed at ultra slim portable product designs. Author Simon Fogg Comment on this article Websites http://www.diodes.com/ Companies Diodes Incorporated This material is protected by Findlay Media copyright See Terms and Conditions. One-off usage is permitted but bulk copying is not. For multiple copies contact the sales team. Enjoy this story? People who read this article also read... NIDays 2013 NIDays is a technical conference designed specifically for ... Read Article Southern Manufacturing This year, Southern Manufacturing and Electronics is set to be ... Read Article Microcontrollers deliver ... Microchip has launched what it describes as the 'world's lowest ... Read Article Remotely access up to 16 ... Lantronix is set to launch its latest evolution device/terminal ... Read Article What you think about this article: Add your comments Name Email Comments Your comments/feedback may be edited prior to publishing. Not all entries will be published. Please view our Terms and Conditions before leaving a comment.