10 February 2012
DDR3s first to provide ‘substantially less’ self refresh power
Micron Technology has announced a new product category of low power DDR3 solutions targeted at the tablet and thin and light client markets.
According to Micron, the 2Gb and 4Gb DDR3Lm devices are the first of their kind to provide substantially less self refresh power (IDD6), yielding longer battery life but maintaining the performance of pc dram.
Micron claims the first 2Gb DDR3Lm will provide up to 50% self refresh power savings compared to standard 2Gb DDR3L, while driving performance up to -1600MT/s when required. The 4Gb DDR3Lm product is designed to deliver the same optimised power efficiency as the 2Gb part, with a reduced chip count, suitable for ultra thin and tablet customers. Both devices will be adopted into Micron's 30nm class in a bid to further optimise the power and performance features - with the 4Gb device hitting a 3.7mA IDD6 target in standby mode, yet still supporting speeds up to -1866 MT/s.
"Power reduction is becoming ever more critical in the fast growing thin and light markets," said Robert Feurle, vice president for Micron's DRAM marketing. "Micron's expertise with traditional pc memory requirements enables these markets to enjoy high performance targets and optimal cost efficiencies. The combination of our commitment to customer collaboration and dedication to leading the way in dram technologies has proven highly successful, and this new class of 30nm dram continues to deliver on that promise."
Sampling of the new DDR3Lm low power product line has begun, with volume production on 30nm class devices expected to begin in 2Q'12.
Micron Technology Ltd
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