02 December 2010
Collaboration aims to ease widespread use of GaN substrates
Advanced engineered substrate specialist Soitec and R&D consultant Sumitomo Electric Industries have collaborated to develop new engineered gallium nitride (GaN) substrates. The alliance will draw on Sumitomo's GaN wafer manufacturing technology and Soitec's Smart Cut layer transfer technology, whereby ultra thin GaN layers are transferred from a single GaN wafer to produce multiple, engineered GaN substrates.
The engineered substrates are said to retain the original, high crystalline quality of Sumitomo's GaN wafer, but at a lower cost. Both companies say the technology will facilitate widespread use of GaN substrates in applications such as high brightness LEDs, as well as electric power devices designed for hybrid and full electric vehicles.
"We are expecting the collaboration with Soitec to enable wider use of our high quality GaN wafer," said Masamichi Yokogawa, Sumitomo Electric's executive officer. "We believe device manufacturers focused on low unit area costs will find value in the greater functionality of these engineered substrates."
André-Jacques Auberton-Hervé, ceo of Soitec, added: "This collaboration represents the first step of an important move in our strategy to address the need for dramatically improved efficiency in power conversion and lighting with innovative materials engineering solutions."
Author
Laura Hopperton
Supporting Information
Websites
http://www.global-sei.com/
http://www.soitec.com
Companies
Sumitomo Electric Europe
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