20 November 2009
Automotive device reduces conduction and switching losses
A new insulated gate bipolar transistor (igbt) could significantly reduce conduction and switching losses, says International Rectifier.
The power management specialist's AUIRG7CH80K6B-M 1200V IGBT features a solderable front metal (sfm) for high current, high voltage automotive inverter modules used in electric vehicles and hybrid electric vehicles.
According to IR, the device incorporates its latest generation field stop trench technology, while the sfm allows dual sided cooling which could improve thermal performance and enable wire bonds – traditionally a potential source of failure in automotive inverter modules - to be eliminated.
The device incorporates a square reverse bias safe operating area, up to 175°C maximum operating temperature, a high peak turn off capability, a positive VCE(on) temperature coefficient and a short circuit rating of 6 microseconds.
Available in die form only, the AUIRG7CH80K6B-M is qualified according to automotive standards.
Author
Chris Shaw
Supporting Information
Websites
http://www.irf.com
Companies
International Rectifier
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