08 February 2010
2Gbit DDR3 memory created on 42nm dram process
Micron Technology and Nanya Technology have jointly developed a 2Gbit DDR3 memory device using their copper based 42nm dram process technology.
"With the move to 42nm – and with a 3xnm process working in our R&D fab – Micron's expertise in copper metallisation and proprietary cell capacitor technology has enabled us to stay on the cutting edge of dram process design and innovation," said Robert Feurle, pictured, vice president of dram marketing.
DDR3 is the predominant memory technology used in high-performance computing applications, including servers, notebooks and desktop computers.
The new memory requires a 1.35V supply, compared to 1.5V in previous devices. This is expected to bring energy savings of up to 30% as well as reducing cooling requirements in server applications. By using a smaller process technology, Micron has boosted memory performance of the 2Gbit dram device to 1866Mbit/s.
Author
Graham Pitcher
Supporting Information
Websites
http://www.micron.com
http://www.nanya.com
Companies
Aptina UK Ltd
Nanya Technology Corp
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