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TSMC goes 45nm in September
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11/04/2007
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TSMC says it will have completed its 45nm technology qualification in time to move to full production this September. The 45nm process combines advanced 193nm immersion photolithography, strained silicon and extreme low k dielectrics.
The 45nm low power process is said to provide twice the density of 65nm with significantly lower power and manufacturing cost per die. End products are expected to achieve 40% greater functionality or 40% smaller die size, with reduced power consumption.
Meanwhile, alongside a doubling in density, the 45nm general purpose and high performance process provides a 30% speed enhancement over the previous generation at similar leakage power.
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Author
Graham Pitcher
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