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Digging deeper dram trenches
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25/09/2006
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DRAM manufacturer Qimonda (a subsidiary of Infineon) is collaborating with the Fraunhofer Institute for Ceramic Technologies and Systems IKTS on a new dram chip production technique.
A team of researchers, led by Tobias Mayer-Uhma, Falko Schlenkrich and Ingolf Endler, has developed an etch resistant film that will make it possible to create deeper and narrower trench structures, thus, increasing the chip’s memory capacity.
The film that has been developed is made of silicon dioxide and is known as the ‘hard mask’. The researchers are also investigating the potential of using an aluminium nitride mask that is five times more resistant than silicon dioxide. The robustness of the mask, combined with increasingly reactive gas mixtures, means deeper trenches can be created, helping in the drive to move to 65nm feature sets.
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Author
Vanessa Knivett
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