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Embedded memory deal inked
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22/08/2006
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Responding to soaring demand for embedded memory, TSMC has inked a technology development and licensing agreement with flash memory leader, Silicon Storage Technology (SST) to provide 90nm embedded flash technology.
Market research firm Webfeet Research calculates that the embedded flash market could reach $6.7billion by 2011, a compound annual growth rate of 14.4%, prompted by high demand from consumer and mobile electronics devices. Comments WebFeet’s ceo Alan Niebel: “As these applications continue to increase functionality, the demand for more advanced embedded flash technologies, like SST’s 90nm SuperFlash technology, will be at a premium.”
SST’s SuperFlash technology consists of a split gate, source side injection, polyerase memory cell that targets lower power and higher density applications such as 64bit microcontroller cores, high speed asics, and multimedia ics. The split gate effect is deemed more reliable than a traditional two transistor byte alterable e2prom cell because each memory cell is isolated from the bit line, eliminating potential overerase caused by stacked gates. Sampling will begin in 2007.
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Author
Vanessa Knivett
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